Negative Thermal Quenching in FASnI3 Perovskite Single Crystals and Thin Films
Negative Thermal Quenching in FASnI3 Perovskite Single Crystals and Thin Films
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DOI：
10.1021/acsenergylett.0c01166
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发表时间：
2020-08-14
影响因子：
22
通讯作者：
Loi, Maria A.
中科院分区：
文献类型：
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作者：
Kahmann, Simon;Nazarenko, Olga;Loi, Maria A.
三碘化甲脒锡（FASnI(3)）是太阳能可持续收集和进一步光电应用的有力竞争者。到目前为止，考虑到确保高材料质量的挑战，只有少数研究考虑了其基本结构-性能关系。在这里，我们通过x射线晶体学、基于密度泛函理论的电子结构计算和室温至4 K的光致发光光谱相结合，研究了高质量的FASnI(3)单晶。冷却后的发光表现出不规则的趋势，强度普遍增强，但热猝灭范围为负，导致亮度在185 K左右达到最大值，这在低质量样品中是不存在的。光致发光峰位置和密度泛函理论计算的带隙能量的差异突出了动态过程对FASnI可观测性质的重要性(3)。所提出的数据提供了更深入地了解这种卤化物钙钛矿的温度依赖特性，并为未来探索其光电特性提供了机会。
Formamidinium tin triiodide (FASnI(3)) is a strong contender for sustainable harvesting of solar energy and further optoelectronic applications. So far, only a few studies have considered its fundamental structure-property relationships, given the challenge of ensuring a high material quality. In a concerted effort, we here study high-quality FASnI(3) single crystals through a combination of X-ray crystallography, density-functional-theory-based electronic structure calculations, and photoluminescence spectroscopy from room temperature down to 4 K. The luminescence exhibits irregular trends upon cooling with a generally strong intensity increase, but a range of negative thermal quenching, leading to an intensity maximum around 185 K which is absent in low-quality samples. Differences in the photoluminescence peak position and density-functional-theory-calculated band-gap energies highlight the importance of dynamic processes to the observable properties of FASnI(3). The presented data offer deeper insight into the temperature-dependent characteristics of this halide perovskite and present opportunities for future exploration of its optoelectronic properties.