Antiferromagnetic Heusler Ru_2MnGe Epitaxial Thin Films Showing Neel Temperature up to 353 K
Antiferromagnetic Heusler Ru_2MnGe Epitaxial Thin Films Showing Neel Temperature up to 353 K
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反铁磁 Heusler Ru_2MnGe 外延薄膜显示尼尔温度高达 353 K
DOI：
10.1109/tmag.2012.2198874
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发表时间：
2012
影响因子：
2.1
通讯作者：
H. Asano
中科院分区：
文献类型：
--
作者：
N. Fukatani;H. Fujita;T. Miyawaki;K. Ueda;H. Asano
研究了Heusler类合金RuMnGe薄膜的结构和电输运特性。在氧化镁衬底上生长的RuMnGe薄膜由于晶格失配较小而受到面内压缩应变，表现出高达353K的反铁磁转变温度，远高于块体材料的K。相比之下，在镁铝衬底上制备的薄膜几乎处于松弛应变状态，接近体积值(304K)。实验还发现，在氧化镁衬底上生长的RuMnGe薄膜表现出与比例有关的振荡行为。我们认为，在RuMnGe中，由于应变的大小，Mn-Mn原子的次近邻磁相互作用发生了振荡，这是导致振荡行为的主要原因。
Structural and electrical transport properties were investigated for Heusler-type alloy RuMnGe thin films. RuMnGe films on MgO substrate were subjected to an in-plane compressive strain due to their small lattice mismatch $({-}0.7\hbox{\%})$, and exhibited enhanced antiferromagnetic transition temperatureup to 353 K, which is much higher than that of the bulk material (K). In contrast, the films on MgAlOwere almost in a relaxed-strain state, and showedclose to the bulk value (304 K). It was also found that theof RuMnGe thin films on MgO exhibited oscillating behavior depending onratio. We argued that the next-nearest neighbor magnetic interactionsof Mn-Mn atoms has oscillated depending on the degree of strain in RuMnGe, which contribute to the oscillating behavior ofagainst.