Non-destructive carrier concentration determination in InAs thin films for THz radiation generating devices using fast differential reflectance spectroscopy
Non-destructive carrier concentration determination in InAs thin films for THz radiation generating devices using fast differential reflectance spectroscopy
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DOI：
10.1007/s11082-016-0653-4
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发表时间：
2016-07
影响因子：
3
通讯作者：
M. Kozub;M. Motyka;M. Dyksik;G. Sȩk;J. Misiewicz;K. Nishisaka;T. Maemoto;S. Sasa
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文献类型：
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作者：
M. Kozub;M. Motyka;M. Dyksik;G. Sȩk;J. Misiewicz;K. Nishisaka;T. Maemoto;S. Sasa
我们提出了一种快速和强大的光学方法来确定在重掺杂的层状结构中的载流子浓度。我们讨论了几个优点的技术相比，其他更常用的方法作为一个例子InAs为基础的设备用于太赫兹辐射的产生。我们的方法导致更准确的估计掺杂水平的研究结构和辅助标准霍尔测量在太赫兹区域的辐射效率的精确预测。预测的增强因子在2%的准确度内再现了太赫兹时域光谱（TDS）实验结果。
We present a fast and robust optical method of determining carrier concentrations in heavily doped layered structures. We discuss several advantages of the technique as compared to other, more commonly applied methods using as an example InAs based devices used for THz radiation generation. Our approach leads to a more accurate estimation of doping levels in the investigated structures and aids the standard Hall measurements in precise predictions of radiative efficacy in the THz region. Predicted enhancement factors reproduce THz-Time Domain Spectroscopy (TDS) experiment results within a 2 % accuracy.