Direct optical probing of negative carriers from an operating [6,6]-phenyl C61 butyric acid methyl ester diode
Direct optical probing of negative carriers from an operating [6,6]-phenyl C61 butyric acid methyl ester diode
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DOI：
10.1063/1.3467007
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发表时间：
2010-07
影响因子：
4
通讯作者：
K. Kanemoto;Akihiko Ogata;N. Inoue;T. Kusumoto;H. Hashimoto;I. Akai;T. Karasawa
中科院分区：
文献类型：
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作者：
K. Kanemoto;Akihiko Ogata;N. Inoue;T. Kusumoto;H. Hashimoto;I. Akai;T. Karasawa
我们对 [6,6]-苯基 C61 丁酸甲酯 (PCBM) 进行了结合二极管操作的光谱测量，以直接表征其 n 载流子的性质。可见光区域的测量表明，n 载流子生成的电子主要容纳在 t1g 和 t1u 能级中。近红外区域的测量表明，与溶液中的 PCBM 阴离子相比，PCBM 二极管的 n 载流子是离域的。我们还表明，光谱信号的频率依赖性可以估计 PCBM 二极管中 n 载流子的寿命 (23 μs)。
We have performed spectroscopic measurements combining with the diode operation of [6,6]-phenyl C61 butyric acid methyl ester (PCBM) for directly characterizing the nature of its n-carriers. The measurements in the visible region reveal that electrons for the n-carrier generation are primarily accommodated into the t1g and t1u levels. The measurements in the near-infrared region indicate that the n-carriers of the PCBM diode are delocalized compared to the PCBM anions in solution. We also show that the frequency-dependence of the spectroscopic signals can estimate the lifetime of the n-carriers in the PCBM diode (23 μs).