A Battery-Assisted Passive EPC Gen-2 RFID Sensor Tag IC With Efficient Battery Power Management and RF Energy Harvesting
A Battery-Assisted Passive EPC Gen-2 RFID Sensor Tag IC With Efficient Battery Power Management and RF Energy Harvesting
复制标题
DOI：
10.1109/tie.2016.2585463
复制
发表时间：
2016-11-01
影响因子：
7.7
通讯作者：
Lee, Jong-Wook
中科院分区：
文献类型：
--
作者：
Vinh-Hao Duong;Nguyen Xuan Hieu;Lee, Jong-Wook
在此，我们提出了一种具有高效电源管理的完全集成的电子产品代码（EPC）Gen-2兼容的电池辅助无源（BAP）射频识别传感器标签集成电路（IC）。标签IC的关键组件包括自适应射频（RF）能量采集器、电池访问控制器（BAC）、存储电容器充电器和电源门控传感器模块。使用动态控制的整流级和阈值补偿技术有效地收集外部RF能量。BAC严格控制电源路径，切断电池泄漏电流。功率门控传感器块以功率高效的方式支持多路复用感测操作。传感器接口包括斩波放大器、可编程增益放大器、多路复用器和8位ADC。对于感测数据记录，通过一次性可编程存储器采用定制设计的非易失性存储器。数字控制模块基于EPCglobal Gen-2标准，该标准经过修改以支持传感操作。标签芯片是在1-poly 6-metal标准0.18 μ m标准CMOS工艺中制造的。标签IC消耗1 μ A用于泄漏和有源操作（0.1%占空比），并且BAP标签IC的估计寿命约为0.2年/mA. h。
Herein, we present a fully integrated electronic product code (EPC) Gen-2 compatible battery-assisted passive (BAP) radio-frequency identification sensor tag integrated circuit (IC) with efficient power management. The key components of the tag IC include an adaptive radio-frequency (RF) energy harvester, a battery access controller (BAC), a storage capacitor charger, and a power-gated sensor block. External RF energy is efficiently harvested using dynamically controlled rectifying stages and a threshold-compensation technique. The BAC tightly controls the power path, cutting off leakage current from the battery. The power-gated sensor block supports multiplexed sensing operations in a power efficient manner. The sensor interface includes a chopper amplifier, a programmable gain amplifier, multiplexers, and an 8-bit ADC. For sensing data logging, custom designed nonvolatile memory is employed via one-time programmable memory. The digital control block is based on an EPCglobal Gen-2 standard that is modified to support the sensing operation. The tag chip was fabricated in a 1-poly 6-metal standard 0.18-mu m standard CMOS process. The tag IC consumes 1 mu A for leakage and active operation (0.1% duty), and the estimated lifespan of the BAP tag IC is about 0.2 year/mA.h.