Size effect in mesoscopic epitaxial ferroelectric structures:: Increase of piezoelectric response with decreasing feature size
Size effect in mesoscopic epitaxial ferroelectric structures:: Increase of piezoelectric response with decreasing feature size
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DOI：
10.1063/1.1475369
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发表时间：
2002-04-29
影响因子：
4
通讯作者：
Muralt, P
中科院分区：
文献类型：
--
作者：
Bühlmann, S;Dwir, B;Muralt, P
采用射频反应磁控溅射法在Nb掺杂SrTiO 3（100）（STO）上外延生长了200 nm厚的Pb（Zr 0.40 Ti 0.60）O 3（PZT）薄膜。图案化过程涉及电子束光刻的聚甲基丙烯酸甲酯，制造的75 nm厚的铬硬掩模层的剥离过程的装置，和干蚀刻的PZT。获得的最小PZT特征在横向尺寸上为100 nm。压电敏感的扫描力显微镜在接触模式下显示了强大的增加的压电响应的特征尺寸与横向尺寸低于300 nm。有人提出，这种行为主要是由于消失的区域。(C)2002年美国物理学会。
An epitaxial 200 nm thick film of Pb(Zr0.40Ti0.60)O-3 (PZT) has been deposited by reactive rf magnetron sputtering on conductive Nb-doped SrTiO3 (100) (STO). The patterning process involved electron-beam lithography of polymethylmethacrylate, fabrication of a 75 nm thick Cr hard mask layer by means of a lift-off process, and dry etching of PZT. The smallest PZT features obtained were 100 nm in lateral dimensions. Piezoelectric sensitive scanning force microscopy in the contact mode revealed a strong increase of the piezoelectric response for feature sizes with lateral dimensions below 300 nm. It is proposed that this behavior is mainly due to vanishing a domains. (C) 2002 American Institute of Physics.