Band-gap engineering for new photonic and electronic devices
Band-gap engineering for new photonic and electronic devices
复制标题
新型光子和电子器件的带隙工程
DOI：
10.1016/0168-9002(88)91062-5
复制
发表时间：
1988
影响因子：
1.4
通讯作者：
F. Capasso
中科院分区：
文献类型：
--
作者：
F. Capasso
带隙工程是设计新型半导体材料和器件的有力技术。异质结和现代生长技术，如分子束外延，允许带图几乎任意和连续的带隙变化。从固态光电倍增管到共振隧道晶体管和自旋极化电子源，具有独特功能的新一代器件正在从这种方法中出现。
Bandgap engineering is a powerful technique for the design of new semiconductor materials and devices. Heterojunctions and modern growth techniques, such as molecular beam epitaxy, allow band diagrams with nearly arbitrary and continuous band-gap variations to be made. A new generation of devices with unique capabilities, ranging from solid-state photomultipliers to resonant tunneling transistors and spin polarized electron sources, is emerging from this approach.