Single-shot measurements of spin-transfer switching in CoFeB/MgO/CoFeB magnetic tunnel junctions
Single-shot measurements of spin-transfer switching in CoFeB/MgO/CoFeB magnetic tunnel junctions
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DOI：
10.1143/apex.1.061303
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发表时间：
2008-06-01
影响因子：
2.3
通讯作者：
Suzuki, Yoshishige
中科院分区：
文献类型：
--
作者：
Tomita, Hiroyuki;Konishi, Katuaki;Suzuki, Yoshishige
使用存储示波器在室温下对椭圆CoFeB/MgO/CoFeB磁性隧道结（60 x 170 nm（2））进行自旋转移诱导磁化翻转的实时测量。自由层厚度和热稳定因子（KuV/k（B）T）分别为2 nm和17。在小直流电流和短上升时间（200 ps）下，开关过程基本上包括长等待时间和短过渡时间（小于400 ps）。我们发现，第一次，开关概率密度是相当低的几个ns后，电流的上升，并成为常数后。这种“非反应时间”的存在可能是快速写入应用程序的关键问题。(C)2008年日本应用物理学会。
Real-time measurements of spin-transfer induced magnetization switching were performed at room temperature on elliptical CoFeB/MgO/CoFeB magnetic tunnel junctions (60 x 170 nm(2)) using a storage oscilloscope. Free layer thickness and thermal stability factor (KuV/k(B)T) were 2 nm and 17, respectively. Under small dc current with short rise time (200 ps), the switching processes essentially comprised long waiting time and short transition time (less than 400 ps). We found, for the first time, that switching probability density was considerably lower for few ns after the rise of the current, and became constant later. Existence of this "non-reactive time" could be a critical issue for fast writing applications. (C) 2008 The Japan Society of Applied Physics.