NONSTOICHIOMETRY AND DOPANTS RELATED PHENOMENA IN LOW TEMPERATURE GAAS GROWN BY MOLECULAR BEAM EPITAXY
NONSTOICHIOMETRY AND DOPANTS RELATED PHENOMENA IN LOW TEMPERATURE GAAS GROWN BY MOLECULAR BEAM EPITAXY
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DOI：
10.1063/1.356099
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发表时间：
1994-04
影响因子：
3.2
通讯作者：
M. Missous;S. O’Hagan
中科院分区：
文献类型：
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作者：
M. Missous;S. O’Hagan
在标准分子束外延生长条件下，在 250 °C 或以下的低温 (LT GaAs) 下生长砷化镓通常会导致晶格中大量掺入过量的砷，从而完全控制所生长材料的电学和光学特性，从而产生几乎电学和光学惰性的材料（或至少缺陷受控）。我们报告了与 250 °C 下 GaAs 生长相关的新现象，并展示了高电活性掺杂材料的数据。这种材料的电光特性与 580 °C 下生长的材料几乎没有区别。通过仔细控制生长条件，可以获得总缺陷浓度小于 1017 cm−3（远低于 LT GaAs 中通常获得的巨大 1020 cm−3）的材料，因此证明高质量 GaAs 实际上可以在极低的温度下生长。这些材料的影响是深远的，这些将在……中讨论。
The growth of GaAs at low temperatures (LT GaAs) at or below 250 °C, under standard molecular beam epitaxy growth conditions usually results in a massive incorporation of excess As in the lattice which then totally dominates the electrical and optical characteristics of the as grown material resulting in almost electrically and optically inactive material (or at least defects controlled). We report on new phenomena associated with the growth of GaAs at 250 °C and we show data on highly electrically active doped material. The electro‐optical properties of this material are literally undistinguishable from material grown at 580 °C. By careful control of the growth conditions, material in which total defect concentrations of less than 1017 cm−3, well below the huge 1020 cm−3 that is normally obtained in LT GaAs, can be achieved therefore demonstrating that high quality GaAs can in effect be grown at extremely low temperatures. The implications for such material are far reaching and these will be discussed in...