Room-temperature ferromagnetism in graphitic petal arrays.
Room-temperature ferromagnetism in graphitic petal arrays.
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DOI：
10.1039/c0nr00870b
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发表时间：
2011-03
期刊：
影响因子：
6.7
通讯作者：
C. Rout;Anurag Kumar;Nitesh Kumar;A. Sundaresan;T. Fisher
中科院分区：
文献类型：
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作者：
C. Rout;Anurag Kumar;Nitesh Kumar;A. Sundaresan;T. Fisher
我们报道了在没有催化剂的情况下通过微波等离子体化学气相沉积在Si衬底上生长的石墨花瓣阵列的室温铁磁性。样品的特征在于拉曼和X-射线光电子能谱，以确认可能的铁磁杂质的情况下。花瓣表现出铁磁磁滞，饱和磁化强度为104.67 emu cm（-3），在300 K下的矫顽力为1050 Oe，与报道的少层石墨烯的行为相当。经O2退火后，样品的饱和磁化强度和矫顽力分别下降到2.1emu cm（-3）和1.75Oe。铁磁性的起源被认为是来自花瓣中的边缘缺陷和空位。
We report room-temperature ferromagnetism of graphitic petal arrays grown on Si substrates by microwave plasma chemical vapor deposition without catalyst. The samples have been characterized by Raman and X-ray photoelectron spectroscopy to confirm the absence of possible ferromagnetic impurities. The petals exhibit ferromagnetic hysteresis with saturation magnetization of ∼4.67 emu cm(-3) and coercivity of ∼105 Oe at 300 K, comparable to the reported behavior of few-layer graphene. Upon O2 annealing the saturation magnetization and coercivity decreased to 2.1 emu cm(-3) and ∼75 Oe respectively. The origin of ferromagnetism is believed to arise from the edge defects and vacancies in the petals.