Direct correlation of structural domain formation with the metal insulator transition in a VO2 nanobeam.
Direct correlation of structural domain formation with the metal insulator transition in a VO2 nanobeam.
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DOI：
10.1021/nl9028973
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发表时间：
2009-11
期刊：
影响因子：
10.8
通讯作者：
Shixiong Zhang;J. Y. Chou;L. Lauhon
中科院分区：
文献类型：
--
作者：
Shixiong Zhang;J. Y. Chou;L. Lauhon
测量了单个VO（2）纳米梁的电阻，同时用拉曼光谱绘制了畴结构，研究了结构畴形成与金属-绝缘体转变之间的关系。随着温度的升高，纳米梁从绝缘单斜M（1）相转变为Mott绝缘M（2）相和金属金红石相的混合物。畴分数用于提取M（2）相的温度依赖性电阻率，其显示出与预期的Mott-Hubbard间隙一致的活化行为。金属单斜相也通过将电荷直接注入到器件中而产生，从而将莫特金属-绝缘体转变从单斜相到金红石结构相变解耦。
The electrical resistance of single VO(2) nanobeams was measured while simultaneously mapping the domain structure with Raman spectroscopy to investigate the relationship between structural domain formation and the metal-insulator transition. With increasing temperature, the nanobeams transformed from the insulating monoclinic M(1) phase to a mixture of the Mott-insulating M(2) and metallic rutile phases. Domain fractions were used to extract the temperature dependent resistivity of the M(2) phase, which showed an activated behavior consistent with the expected Mott-Hubbard gap. Metallic monoclinic phases were also produced by direct injection of charge into devices, decoupling the Mott metal-insulator transition from the monoclinic to rutile structural phase transition.