Plasma-surface interaction experimental device: PSIEC and its first plasma exposure experiments on bulk tungsten and coatings
Plasma-surface interaction experimental device: PSIEC and its first plasma exposure experiments on bulk tungsten and coatings
复制标题
等离子体-表面相互作用实验装置:PSIEC 及其首次针对块状钨和涂层的等离子体暴露实验
DOI:
10.1016/j.fusengdes.2020.112198
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发表时间:
2021
影响因子:
1.7
通讯作者:
Wu Yucheng
中科院分区:
文献类型:
--
作者:
Xu Yue;Xu Yunfeng;Wu Zuosheng;Luo Laima;Zan Xiang;Yao Gang;Xi Ya;Wang Yafeng;Ding Xiaoyu;Bi Hailin;Zhu Xiaoyong;Xu Qiu;Wu Jiefeng;Wu Yucheng
A new laboratory-scale linear plasma device, PSIEC (Plasma-Surface Interaction system under Extreme Conditions), has been designed and constructed at Hefei University of Technology, China, to study plasma-material interactions for fusion reactor application. The PSIEC facility can generate continuous plasmas of hydrogen, deuterium, helium, argon and nitrogen. The electron density of these plasmas ranges from the order of magnitude of 1017to 1018/m3and the electron temperature ranges from 1 to 40 eV. The incident ion energy is adjusted by applying a negative bias up to 110 V to the target. The plasma bombarding flux is varied from the order of magnitude of 1021to 1022ions/m2/s. Using the PSIEC facility, first plasma exposure experiments have been conducted on bulk tungsten and coatings. The different microstructure of tungsten have been found to lead to different damage effects under helium plasma exposure. Preliminary results allow us to expect nanocrystalline tungsten to be a promising candidate for plasma-facing material, of which the high concentration of intrinsic defects such as grain boundaries and interfaces offers the possibility of improving their irradiation resistance.
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影响因子:
1.7
作者:
G. D. Temmerman;M. V. D. Berg;J. Scholten;A. Lof;H. V. D. Meiden;H. V. Eck;T. Morgan;T. M. D. Kruijf;P. A. V. Emmichoven;J. Zielinski
通讯作者:
G. D. Temmerman;M. V. D. Berg;J. Scholten;A. Lof;H. V. D. Meiden;H. V. Eck;T. Morgan;T. M. D. Kruijf;P. A. V. Emmichoven;J. Zielinski
影响因子:
3.1
作者:
Y. Hirooka;H. Ohgaki;Y. Ohtsuka;M. Nishikawa
通讯作者:
M. Nishikawa
影响因子:
0.9
作者:
A. Kreter
通讯作者:
A. Kreter
影响因子:
3.1
作者:
Nishijima, D;Ye, MY;Takamura, S
通讯作者:
Takamura, S
影响因子:
3.3
作者:
Kajita, Shin;Sakaguchi, Wataru;Saeki, Tsubasa
通讯作者:
Saeki, Tsubasa