Plasma-surface interaction experimental device: PSIEC and its first plasma exposure experiments on bulk tungsten and coatings

Plasma-surface interaction experimental device: PSIEC and its first plasma exposure experiments on bulk tungsten and coatings
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等离子体-表面相互作用实验装置:PSIEC 及其首次针对块状钨和涂层的等离子体暴露实验

DOI:
10.1016/j.fusengdes.2020.112198
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发表时间:
2021
影响因子:
1.7
通讯作者:
Wu Yucheng
Wu Yucheng
中科院分区:
工程技术3区
文献类型:
--
作者:
Xu Yue;Xu Yunfeng;Wu Zuosheng;Luo Laima;Zan Xiang;Yao Gang;Xi Ya;Wang Yafeng;Ding Xiaoyu;Bi Hailin;Zhu Xiaoyong;Xu Qiu;Wu Jiefeng;Wu Yucheng

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合肥工业大学设计并建造了一台用于聚变堆等离子体-材料相互作用研究的新型实验室线性等离子体装置PSIEC(Plasma-Surface Interaction System under Extreme Conditions)。PSIEC设施可以产生氢、氘、氦、氩和氮的连续等离子体。这些等离子体的电子密度范围从1017到1018/m3的数量级和电子温度范围从1到40 eV。通过向靶施加高达110 V的负偏压来调节入射离子能量。等离子体轰击通量在1021 ~ 1022 ions/m2/s数量级之间变化。利用PSIEC设备,第一等离子体暴露实验已经进行了散装钨和涂层。钨的不同微观结构在氦等离子体辐照下会产生不同的损伤效应。初步的结果使我们可以预期纳米晶钨是一个有前途的候选人等离子体面对材料,其中高浓度的本征缺陷,如晶界和界面提供了改善其耐辐照性的可能性。
A new laboratory-scale linear plasma device, PSIEC (Plasma-Surface Interaction system under Extreme Conditions), has been designed and constructed at Hefei University of Technology, China, to study plasma-material interactions for fusion reactor application. The PSIEC facility can generate continuous plasmas of hydrogen, deuterium, helium, argon and nitrogen. The electron density of these plasmas ranges from the order of magnitude of 1017to 1018/m3and the electron temperature ranges from 1 to 40 eV. The incident ion energy is adjusted by applying a negative bias up to 110 V to the target. The plasma bombarding flux is varied from the order of magnitude of 1021to 1022ions/m2/s. Using the PSIEC facility, first plasma exposure experiments have been conducted on bulk tungsten and coatings. The different microstructure of tungsten have been found to lead to different damage effects under helium plasma exposure. Preliminary results allow us to expect nanocrystalline tungsten to be a promising candidate for plasma-facing material, of which the high concentration of intrinsic defects such as grain boundaries and interfaces offers the possibility of improving their irradiation resistance.
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