Lattice extension in Cu3NMgx thin films and the induced effect
Lattice extension in Cu3NMgx thin films and the induced effect
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DOI：
10.1016/j.jallcom.2016.05.307
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发表时间：
2016-11
影响因子：
6.2
通讯作者：
T. Xu;Z. Cao;A. Ji
中科院分区：
文献类型：
--
作者：
T. Xu;Z. Cao;A. Ji
外来原子占据原基体晶格位置以外的非本征位置可以有效地带来新的材料性能。采用射频反应磁控共溅射法在硅和石英衬底上制备了x ~ 0.32的三元Cu 3 NMgx薄膜，其中Mg原子占据了立方Cu 3 N晶格的晶胞中心.上限由沉积物的结晶度劣化确定，所述结晶度劣化是由于减弱的整体结合强度和晶格膨胀。随着Mg掺杂原子量的增加，Cu 3 NMgx化合物的带隙逐渐变窄，室温电阻率下降了四个数量级，但所有沉积物仍然是n型半导体。讨论了导致Cu_3 NMg_x化合物电阻率降低的因素。这些结果可能会激发更多的努力，通过晶格扩展新的和很大程度上可调的材料性能的材料设计。
Foreign atoms occupying extrinsic positions other than lattice sites of the original matrix can effectively bring out new material properties. Ternary Cu3NMgxthin films with x up to x = 0.32 were synthesized on silicon and quartz substrates by RF reactive magnetron cosputtering of copper and magnesium targets, in which the Mg atoms occupy the previously empty centers of unit cells of the cubic Cu3N lattice. The upper limit was determined by the deteriorated crystallinity of the deposits due to weakened overall bonding strength and lattice expansion. With increasing amount of Mg dopant atoms, the Cu3NMgxcompounds exhibit a steadily narrowed band gap that the room temperature electrical resistivity drops by four orders of magnitude, yet all the deposits remain n-type semiconductor. The factors contributing to the reduced electrical resistivity in Cu3NMgxcompounds with larger x values are discussed. These results may inspire more efforts towards material design via lattice extension for new and largely adjustable material properties.