Synergistic Effects of Plasmonics and Electron Trapping in Graphene Short-Wave Infrared Photodetectors with Ultrahigh Responsivity
Synergistic Effects of Plasmonics and Electron Trapping in Graphene Short-Wave Infrared Photodetectors with Ultrahigh Responsivity
复制标题
超高响应度石墨烯短波红外光电探测器中等离子体激元和电子捕获的协同效应
DOI：
10.1021/acsnano.6b06172
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发表时间：
2017-01-01
期刊：
影响因子：
17.1
通讯作者：
Xu, Jian-Bin
中科院分区：
文献类型：
--
作者：
Chen, Zefeng;Li, Xinming;Xu, Jian-Bin
石墨烯独特的电子和光学特性使其成为开发超快短波红外（SWIR）光电探测器的有吸引力的材料。然而，石墨烯SWIR光电探测器的性能受到石墨烯的低光吸收和光致载流子的超短寿命的限制。在这里，我们提出了两种机制来克服这两个缺点，并展示了一种具有高响应性和快速光响应的基于石墨烯的SWIR光电探测器。特别是，在石墨烯通道中使用垂直内置场来捕获光诱导电子并在石墨烯中留下空穴，从而延长了光诱导载流子的寿命。另一方面，利用等离子体效应实现光子捕获，增强石墨烯的光吸收。由于上述两种机制，所提出的SWIR光电探测器在1.55 μ m波长下的响应率高达83 a /W，快速上升时间小于600 ns。该器件设计概念解决了高性能石墨烯SWIR光电探测器的关键挑战，并有望发展中/远红外光电应用。
Graphene's unique electronic and optical properties have made it an attractive material for developing ultrafast short-wave infrared (SWIR) photo detectors. However, the performance of graphene SWIR photodetectors has been limited by the low optical absorption of graphene as well as the ultrashort lifetime of photoinduced carriers. Here, we present two mechanisms to overcome these two shortages and demonstrate a graphene-based SWIR photodetector with high responsivity and fast photoresponse. In particular, a vertical built-in field is employed in the graphene channel for trapping the photoinduced electrons and leaving holes in graphene, which results in prolonged photoinduced carrier lifetime. On the other hand, plasmonic effects were employed to realize photon trapping and enhance the light absorption of graphene. Thanks to the above two mechanisms, the responsivity of this proposed SWIR photodetector is up to a record of 83 A/W at a wavelength of 1.55 mu m with a fast rising time of less than 600 ns. This device design concept addresses key challenges for high-performance graphene SWIR photodetectors and is promising for the development of mid/far-infrared optoelectronic applications.