Tunable quasi-two-dimensional electron gases in oxide heterostructures
Tunable quasi-two-dimensional electron gases in oxide heterostructures
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DOI：
10.1126/science.1131091
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发表时间：
2006-09-29
期刊：
影响因子：
56.9
通讯作者：
Mannhart, J.
中科院分区：
文献类型：
--
作者：
Thiel, S.;Hammerl, G.;Mannhart, J.
我们报告了一个大的电场响应的准二维电子气产生在界面处的外延生长的绝缘氧化物异质结构。这些器件结构的特征在于掺杂层，其在空间上与高迁移率准二维电子气分离，并且因此呈现与半导体高电子迁移率晶体管类似的氧化物。通过施加栅极电压，可以通过从绝缘状态到金属状态的量子相变来调制电子气的导电性。
We report on a large electric-field response of quasi-two-dimensional electron gases generated at interfaces in epitaxial heterostructures grown from insulating oxides. These device structures are characterized by doping layers that are spatially separated from high-mobility quasi-two-dimensional electron gases and therefore present an oxide analog to semiconducting high - electron mobility transistors. By applying a gate voltage, the conductivity of the electron gases can be modulated through a quantum phase transition from an insulating to a metallic state.