SiC Substrate-Integrated Waveguides for High-Power Monolithic Integrated Circuits Above 110 GHz
SiC Substrate-Integrated Waveguides for High-Power Monolithic Integrated Circuits Above 110 GHz
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DOI：
10.1109/ims19712.2021.9574845
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发表时间：
2021-06
期刊：
影响因子：
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通讯作者：
M. J. Asadi;Lei Li;Wenwen Zhao;K. Nomoto;P. Fay;H. Xing;D. Jena;J. Hwang
中科院分区：
文献类型：
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作者：
M. J. Asadi;Lei Li;Wenwen Zhao;K. Nomoto;P. Fay;H. Xing;D. Jena;J. Hwang
在SIC WAVER上设计，制造和测量的底物综合性波导（SIW）以及基于SIW的谐振器，基于SIW的过滤器（GCPWS），gcpw-siw siw themibrations coplanar波导（GCPWS）结果D波段（110-170 GHz）SIWS呼气的低插入损失为0.22±0.04 dB/mm，这是GCPW的四倍。 ，天线和其他电路元素同样的sic芯片。
Substrate-integrated waveguides (SIWs) of different geometry are designed, fabricated, and measured on a SiC wafer, along with SIW-based resonators, SIW-based filters, grounded coplanar waveguides (GCPWs), GCPW-SIW transitions, and calibration structures. Two-tier calibration is used to extract the intrinsic SIW characteristics from GCPW-probed scattering parameters. The resulted D-band (110–170 GHz) SIWs exhibit a record low insertion loss of 0.22 ± 0.04 dB/mm, which is four times better than that of the GCPWs. A 3-pole filter exhibits a 1.0-dB insertion loss and a 25-dB return loss at 135 GHz, which represents the state of the art of SiC SIW filters and is order-of-magnitude better than Si on-chip filters. These results show the promise of SIWs for integrating HEMTs, filters, antennas, and other circuit elements on the same SiC chip.