Resonant electron tunneling through semiconducting nanocrystals in a symmetrical and an asymmetrical junction
Resonant electron tunneling through semiconducting nanocrystals in a symmetrical and an asymmetrical junction
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DOI：
10.1103/physrevb.62.r7743
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发表时间：
2000-09-15
影响因子：
3.7
通讯作者：
Vanmaekelbergh, D
中科院分区：
文献类型：
--
作者：
Bakkers, EPAM;Vanmaekelbergh, D
我们研究了共振电子隧穿通过个别的CdSe和CdS纳米晶体在两种类型的配置。随着纳米晶体电沉积在裸金，光谱显示共振隧穿通过离散的未占用（CB区）和占用的水平（VB区），分别在正和负偏压。在这种不对称的配置中，偏压仅分布在尖端/点势垒上;这允许人们从隧穿光谱中推导出纳米晶体的电子结构。胶体纳米晶体通过己烷二硫醇共价锚定到金基底，尖端到金和金，尖端隧穿通过相同的未被占据的水平发生。
We studied resonant electron tunneling through individual CdSe and CdS nanocrystals in two types of configuration. With nanocrystals electrodeposited on bare gold, the spectra show resonant tunneling via discrete unoccupied (CB region) and occupied levels (VB region) at positive and negative bias, respectively. In this asymmetrical configuration, the bias is only distributed across the tip/dot barrier; this allows one, in principle, to derive the electronic structure of nanocrystals from tunneling spectra. With colloidal nanocrystals covalently anchored to a gold substrate via hexane dithiol, tip-to-gold and gold,to-tip tunneling occurs via the same set of unoccupied levels.