g-C3N4 decorated ZnO nanorod arrays for enhanced photoelectrocatalytic performance
g-C3N4 decorated ZnO nanorod arrays for enhanced photoelectrocatalytic performance
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g-C3N4 修饰的 ZnO 纳米棒阵列可增强光电催化性能
DOI:
10.1016/j.apsusc.2015.08.066
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发表时间:
2015-12-15
影响因子:
6.7
通讯作者:
Liu, Zhao-Qing
中科院分区:
文献类型:
--
作者:
Kuang, Pan-Yong;Su, Yu-Zhi;Liu, Zhao-Qing
Heterojunction can not only offer a wide range of solar light absorption but also facilitate the separation of photoinduced charge carriers, and thereby lead to enhanced photoelectrochemical efficiency. Herein, we report the heterostructured g-C3N4/ZnO nanorod arrays (NRAs) for enhanced photoelectrocatalytic performance. The g-C3N4 shell layer of about 20-30 nm was coated on the surface of ZnO nanorod uniformly through thermal annealing the melamine precursor. Compared to the pristine ZnO and g-C3N4, the as-prepared g-C3N4/ZnO NRAs exhibit enhanced photoelectrocatalytic activity for methylene blue (MB) decolorization under visible light illumination. This enhancement of photoelectrocatalytic performance may be mainly attributed to improved separation efficiency of charge carriers from photoexcited g-C3N4 to ZnO across the g-C3N4/ZnO interfaces. (C) 2015 Elsevier B.V. All rights reserved.