Contact characterization by photoemission and device performance in P3HT based organic transistors
Contact characterization by photoemission and device performance in P3HT based organic transistors
复制标题
DOI：
10.1063/1.3693541
复制
发表时间：
2012-03
影响因子：
3.2
通讯作者：
S. Scheinert;M. Grobosch;G. Paasch;I. Hörselmann;M. Knupfer;J. Bartsch
中科院分区：
文献类型：
--
作者：
S. Scheinert;M. Grobosch;G. Paasch;I. Hörselmann;M. Knupfer;J. Bartsch
作为有机场效应晶体管（OFET）的有机器件的工作关键取决于有机层与源极/漏极材料之间的接触。为了有效的操作，需要小的载流子注入屏障。为了支持对有机器件的理解，光发射光谱已被用于确定金属/有机界面的性质。近十年来，不同小组确定的钻孔注入势垒值通常在0.5-1 eV量级。目前尚不清楚由于象电荷引起的势垒降低是否足以使与这种势垒的接触有效地用于载流子注入。事实上，没有任何结果报告的制备样品的光发射研究和设备是相同的。在这里，我们展示了对具有金源/漏极触点的ofet的研究结果。测量到的0.6 eV的金触点空穴势垒是由4.6 eV的Au功函数. ...得到的
The operation of organic devices as organic field-effect transistors (OFET) depends critically on the contact between the organic layer and the material for source/drain electrodes. Small barriers for carrier injection are required for efficient operation. In order to support the understanding of organic devices, photoemission spectroscopy has been used to determine the properties of metal/organic interfaces. Values for the hole injection barrier determined in the last decade by different groups are frequently of the order of 0.5–1 eV. It is not clear whether barrier lowering due to the image charge is sufficient to make contacts with such barriers efficient for carrier injection. Indeed, no results have been reported where the preparation of the samples for the photoemission study and for the devices are the same. Here we present results of such an investigation for OFETs with gold source/drain contacts. The measured hole barrier at the gold contact of 0.6 eV results from the Au work function of 4.6 eV. ...