Ab Initio Investigation of the Structural and Electronic Properties of HgTe/CdTe Superlattices
Ab Initio Investigation of the Structural and Electronic Properties of HgTe/CdTe Superlattices
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DOI：
10.1007/s11664-017-5475-z
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发表时间：
2017-04
影响因子：
2.1
通讯作者：
Amel Laref-;M. Alsagri;S. Laref;S. Luo
中科院分区：
文献类型：
--
作者：
Amel Laref-;M. Alsagri;S. Laref;S. Luo
We carried out first-principle calculations to examine the impact of layer periodicity and strain on the structural and electronic features of HgTe/CdTe superlattices (SLs). The full-potential linearized augmented plane wave methodology is used to determine the electronic characteristics of these CdTe-HgTe heterojunctions. The CdTe and HgTe layers have a strong effect on the emerged fundamental energy gap of the SLs owing to the peculiar quantum confinement effect. The impact of layer thickness changes and strain are indispensable for engineering the energy band gap of HgTe/CdTe SLs. This could lead to an enormous development in the optoelectronic characteristics of these SLs, which may result in their broad applications in electronic devices.
