Properties of indium tin oxide films prepared by rf reactive magnetron sputtering at different substrate temperature
Properties of indium tin oxide films prepared by rf reactive magnetron sputtering at different substrate temperature
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DOI：
10.1016/s0040-6090(97)00939-5
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发表时间：
1998-06-08
期刊：
影响因子：
2.1
通讯作者：
dos Santos, MP
中科院分区：
文献类型：
--
作者：
Meng, LJ;dos Santos, MP
采用射频反应磁控溅射法在不同衬底温度（RT-500 ℃）下在玻璃衬底上制备了氧化铟锡（ITO）薄膜。通过X射线衍射、扫描电子显微镜、光学透射率和反射率、方块电阻和电阻率测量对ITO薄膜的结构、光学和电学性能进行了表征。在低衬底温度下沉积的薄膜具有很强的（222）衍射峰，这意味着沿[111]方向沿着择优取向。随着温度的升高，（400）衍射峰强度增加，并且导致在500 ℃衬底温度下制备的薄膜沿沿着[100]方向的择优取向。在400 ℃衬底温度下制备的膜具有最低的电阻率（约3.7 × 10（-4）Ohm cm）。(C)1998年Elsevier Science S.A. All rights reserved.
Indium tin oxide (ITO) films were deposited onto the glass substrates at different substrate temperatures (RT-500 degrees C) by rf reactive magnetron sputtering method. The structural, optical and electrical properties of ITO films have been characterized by X-ray diffraction, scanning electron microscopy, optical transmittance and reflectance, sheet resistance and electrical resistivity measurements. The films deposited at low substrate temperature have a very strong (222) diffraction peak which means a preferred orientation along the [111] direction. As the temperature is increased, the (400) diffraction peak intensity increases and results in a preferred orientation along [100] direction for the films prepared at 500 degrees C substrate temperature. The film prepared at 400 degrees C substrate temperature has the lowest electrical resistivity (about 3.7 X 10(-4) Ohm cm). (C) 1998 Elsevier Science S.A. All rights reserved.