Nonlinear limits for single-crystal silicon microresonators
Nonlinear limits for single-crystal silicon microresonators
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DOI：
10.1109/jmems.2004.835771
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发表时间：
2004-10-01
影响因子：
2.7
通讯作者：
Seppä, H
中科院分区：
文献类型：
--
作者：
Kaajakari, V;Mattila, T;Seppä, H
单晶硅微谐振器的非线性效应；重点分析机械非线性。体声波 (BAW) 谐振器的储能能力比弯曲梁谐振器高出几个数量级。测量了硅 BAW 谐振器的分叉点，并且显示最大振动幅度接近固有材料极限。非线性在设置振动能量存储极限方面的重要性在振荡器应用中得到了证明。将基于硅微谐振器的振荡器计算出的相位噪声与传统的基于宏观石英的振荡器进行比较，结果表明，硅谐振器可获得的更高能量密度可以部分补偿较小的微谐振器尺寸。开发了微谐振器相位噪声的缩放定律。
Nonlinear effects in single-crystal silicon microresonators; are analyzed with the focus on mechanical nonlinearities. The bulk acoustic wave (BAW) resonators are shown to have orders-of-magnitude higher energy storage capability than flexural beam resonators. The bifurcation point for the silicon BAW resonators is measured and the maximum vibration amplitude is shown to approach the intrinsic material limit. The importance of nonlinearities in setting the limit for vibration energy storage is demonstrated in oscillator applications. The phase noise calculated for silicon microresonator-based oscillators is compared to the conventional macroscopic quartz-based oscillators, and it is shown that the higher energy density attainable with the silicon resonators can partially compensate for the small microresonator size. Scaling law for microresonator phase noise is developed.