Fabrication of site-controlled InGaN quantum dots using reactive-ion etching
Fabrication of site-controlled InGaN quantum dots using reactive-ion etching
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使用反应离子蚀刻制造位点控制的 InGaN 量子点
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
P. Ku
中科院分区：
文献类型：
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作者：
L. Lee;P. Ku
我们采用简单的自顶向下刻蚀方法制备了位置和尺寸可控的InGaN量子点。每个量子点都是盘形的，嵌入在纳米级的柱子中。采用电感耦合等离子体反应离子刻蚀技术，在InGaN/GaN单量子阱中制备了不同密度和直径的纳米柱阵列。使用微观光致发光（µ-PL）来表征纳米柱个体和整体的发射特性。即使在室温下，也观察到单个纳米柱的强而明显的PL信号。发射被发现表现出从一个离散的能量状态，均匀加宽的特性。纳米柱的集合体表现出与单个纳米柱相似的发射线宽，表明良好控制的量子点尺寸和均匀性。（© 2012 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
We adopted the simple top-down etching to fabricate site- and dimension-controlled InGaN quantum dots. Each quantum dot is disk shaped and embedded in a nanoscale pillar. Arrays of nanopillars with varying densities and nanopillar diameters were fabricated from an InGaN/GaN single quantum well using inductively-coupled plasma reactive-ion etching. Micro-photoluminescence (µ-PL) was used to characterize the emission properties of individual and ensemble of nanopillars. Strong and distinct PL signal of a single nanopillar was observed even at the room temperature. The emission was found to exhibit characteristics from a discrete energy state that is homogeneously broadened. The ensemble of nanopillars exhibited a similar emission linewidth as the single nanopillar, indicating a well controlled quantum dot dimensions and uniformity. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)