The position effect on electrical field intensity for metal deposition process
The position effect on electrical field intensity for metal deposition process
复制标题
金属沉积过程中电场强度的位置效应
DOI：
10.1177/0954405415625917
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
Z. Huang
中科院分区：
文献类型：
--
作者：
Bo;Jung;Wen;N. Chiu;Z. Huang
真空金属薄膜沉积（溅射）系统的重要参数是材料特性，如电势、靶材与基片的距离等。在溅射过程中适当控制这些工艺参数，可以降低沉积后的残余应力，有效地提高基片的变形和金属薄膜的致密度。本研究旨在模拟一种真空金属薄膜沉积系统，应用于一般金属材料的基板。作为靶材料的铜箔和放置在载体平台上的基板都包括在真空室中。氩离子气体由射频功率发生器激发以形成溅射系统中的等离子体源。利用等离子体产生过程中的“帕邢曲线”中的“辉光放电”激发氩离子气体轰击靶材。靶材料的喷射原子沉积在衬底表面上以形成期望的薄膜。本文讨论了射频功率、电场强度、靶材与衬底之间的距离等参数对薄膜生长的影响。数值分析结果表明，基片与靶材之间的距离对金属膜的密度有显著影响。MATLAB仿真结果可为半导体行业采用溅射系统生产金属薄膜提供寻找较好工件高度和高镀膜质量的技术。
Material characteristics, such as electric potential, distance between target material and substrate, and so on, are important parameters for vacuum metal films deposition (sputtering) system. Properly controlling these parameters during the sputtering process can reduce the residual stress after deposition and can effectively improve the deformation of substrate and density of metal thin film. This study aims at simulating a vacuum metal film deposition system for substrate application with normal metal material. Both the copper foil, as a target material, and the substrate that is placed on a carrier platform are included in a vacuum chamber. The argon ion gas is excited by a radio frequency power generator to form the plasma source in the sputtering system. “Glow Discharge” of the “Paschen Curve” during plasma generation process is employed to excite the argon ion gas to bombard the target material. The ejected atoms of target material are deposited on the substrate surface to form the desired thin films. Several different parameters, such as radio frequency power, electric field intensity, distance between the target materials and the substrate, and so on, are discussed in this article. Numerical analysis results indicate that the distance between the substrate and target materials may affect the density of metal film significantly. The MATLAB simulation results can provide the technique of finding better workpiece height and high coating quality for the semi-conduction industrial adopting sputtering system for metal thin film production.