Epitaxial iron oxide nanocrystals with memory function grown on Si substrates
Epitaxial iron oxide nanocrystals with memory function grown on Si substrates
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DOI：
10.7567/apex.9.055508
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发表时间：
2016-04
影响因子：
2.3
通讯作者：
T. Ishibe;H. Matsui;Kentaroh Watanabe;S. Takeuchi;A. Sakai;Y. Nakamura
中科院分区：
文献类型：
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作者：
T. Ishibe;H. Matsui;Kentaroh Watanabe;S. Takeuchi;A. Sakai;Y. Nakamura
采用分子束外延技术，以外延Ge纳米晶为成核点，在Si衬底上外延生长了高密度的Fe 3 O 4 −δ纳米晶。扫描隧道光谱测量表明，生长的Fe 3 O 4 −δ纳米碳的表面带隙为0.2 eV，与Fe 3 O 4 −δ薄膜的报道一致。导电原子力显微镜测量的NC显示滞后的电压-电流曲线，表明双极电阻开关行为。测量结果证实了NC在电阻开关特性方面优于传统的多晶Fe 3 O 4 −δ薄膜/Si。这证明了开发由普遍存在的Fe 3 O 4 −δ NC材料组成的电阻随机存取存储器器件的可能性。
High-density Fe3O4−δ nanocrystals (NCs) were epitaxially grown on Si substrates by molecular beam epitaxy with epitaxial Ge NCs being used as nucleation sites. Scanning tunneling spectroscopy measurements showed that the surface bandgap of the as-grown Fe3O4−δ NCs was ∼0.2 eV, consistent with that reported for Fe3O4−δ films. Conductive atomic force microscopy measurements of the NCs revealed hysteresis in the voltage–current curves, indicating bipolar resistive switching behavior. The measurement results established the superiority of the NCs to thin conventional polycrystalline Fe3O4−δ films/Si in terms of resistive switching characteristics. This demonstrated the possibility of developing resistance random access memory devices composed of ubiquitous Fe3O4−δ NC materials.