AlN/InN metal oxide semiconductor heterostructure field effect transistor
AlN/InN metal oxide semiconductor heterostructure field effect transistor
复制标题
AlN/InN金属氧化物半导体异质结构场效应晶体管
DOI：
10.1002/pssc.200983597
复制
发表时间：
2010
期刊：
影响因子：
--
通讯作者：
A. Hashimoto and A. Yamamoto
中科院分区：
文献类型：
--
作者：
Md. Sherajul Islam;Sakib M. Muhtadi;Md. Tanvir Hasan;Ashraful G. Bhuiyan;Md. Rafiqul Islam;A. Hashimoto and A. Yamamoto
本文描述了一种新型的AlInN/InN金属氧化物半导体异质结场效应晶体管（MOSHFET），它是未来高性能微波器件的一个有前途的候选器件。利用蒙特卡罗模拟计算了所提出的AlInN/InN MOSHFET的传输特性，如通道迁移率和速度场特性。利用解析模型对直流和高频性能进行了评估。发现最高迁移率为8.1×104cm2V-1s-1at，片载子浓度为8.79×1012cm-2。在66 kV/cm的电场下，器件的最大漂移速度为8.3×107cm/s。当栅极长度为0.25 μm时，最大截止频率、跨导和漏极电流分别为160 GHz、280 mS/mm和879 mA/mm。计算结果与已发表的GaN MOSHFET结果吻合良好（©2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim）
This paper describes a novel AlInN/InN metal‐oxide‐semiconductor heterojunction field effect transistor (MOSHFET) as a promising candidate for future high performance microwave devices. The transport properties such as channel mobility and velocity‐field characteristics of the proposed AlInN/InN MOSHFET are calculated using Monte Carlo simulation. The DC and high frequency performances are assessed using an analytical model. The highest mobility is found to be 8.1×104cm2V–1s–1at a sheet carrier concentration of 8.79×1012cm–2. The peak drift velocity obtained for the device is 8.3×107cm/s at the field of 66 kV/cm. The maximum cut‐off frequency, transconductance and drain current have been found 160 GHz, 280 mS/mm, and 879 mA/mm, respectively, for a gate length of 0.25 μm. The calculated results are in good agreement with the published results of GaN MOSHFET (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)