Anomalous thermal transport under high pressure in boron arsenide
Anomalous thermal transport under high pressure in boron arsenide
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DOI:
10.1038/s41586-022-05381-x
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发表时间:
2022-11-23
期刊:
影响因子:
64.8
通讯作者:
Hu, Yongjie
中科院分区:
文献类型:
--
作者:
Li, Suixuan;Qin, Zihao;Hu, Yongjie
High pressure represents extreme environments and provides opportunities for materials discovery(1-8). Thermal transport under high hydrostatic pressure has been investigated for more than 100 years and all measurements of crystals so far have indicated a monotonically increasing lattice thermal conductivity. Here we report in situ thermal transport measurements in the newly discovered semiconductor crystal boron arsenide, and observe an anomalous pressure dependence ofthe thermal conductivity. We use ultrafast optics, Raman spectroscopy and inelastic X-ray scattering measurementsto examine the phonon bandstructure evolution ofthe optical and acoustic branches, as well asthermal conductivity undervaried temperatures and pressures up to 32 gigapascals. Using atomistictheory, we attribute the anomalous high-pressure behaviour to competitive heat conduction channels from interactive high-order anharmonicity physics inherent to the unique phonon bandstructure. Our study verifies ab initio theory calculations and we showthat the phonon dynamics-resulting from competing three-phonon and four-phonon scattering processes-are beyond those expected from classical models and seen in common materials. This work uses high-pressure spectroscopy combined with atomistic theory as a powerful approach to probe complex phonon physics and provide fundamental insights for understanding microscopic energy transport in materials of extreme properties.