Ultrasonic flexural vibration assisted chemical mechanical polishing for sapphire substrate
Ultrasonic flexural vibration assisted chemical mechanical polishing for sapphire substrate
复制标题
超声波弯曲振动辅助蓝宝石衬底化学机械抛光
DOI：
10.1016/j.apsusc.2010.01.053
复制
发表时间：
2010-04-01
影响因子：
6.7
通讯作者：
Luo, Jianbin
中科院分区：
文献类型：
--
作者：
Xu, Wenhu;Lu, Xinchun;Luo, Jianbin
分别采用不同压力的传统化学机械抛光(CMP)和超声波弯曲振动(UFV)辅助CMP(UFV-CMP)对蓝宝石衬底进行抛光。 UFV-CMP结合了传统CMP和超声波加工(USM)的功能，具有特殊的特点，即旋转抛光头的超声波振动是水平和垂直两个方向。比较了 CMP 和 UFV-CMP 的材料去除率 (MRR) 和抛光表面形貌。 UFV-CMP 的 MRR 是传统 CMP 的两倍。通过原子力显微镜（AFM）测量，UFV-CMP抛光蓝宝石衬底的表面粗糙度（均方根，RMS）为0.83埃，远优于传统CMP获得的2.12埃。 UFV-CMP的表面平整度为0.12μm，也优于传统CMP的0.23μm。结果表明，UFV-CMP能够极大地提高蓝宝石衬底的MRR和成品表面质量。还讨论了 UFV-CMP 中蓝宝石的材料去除和表面抛光机制。 (C) 2010 Elsevier B.V. 保留所有权利。
The sapphire substrates are polished by traditional chemical mechanical polishing (CMP) and ultrasonic flexural vibration (UFV) assisted CMP (UFV-CMP) respectively with different pressures. UFV-CMP combines the functions of traditional CMP and ultrasonic machining (USM) and has special characteristics, which is that ultrasonic vibrations of the rotating polishing head are in both horizontal and vertical directions. The material removal rates (MRRs) and the polished surface morphology of CMP and UFV-CMP are compared. The MRR of UFV-CMP is two times larger than that of traditional CMP. The surface roughness (root mean square, RMS) of the polished sapphire substrate of UFV-CMP is 0.83 angstrom measured by the atomic force microscopy (AFM), which is much better than 2.12 angstrom obtained using the traditional CMP. And the surface flatness of UFV-CMP is 0.12 mu m, which is also better than 0.23 mu m of the traditional CMP. The results show that UFV-CMP is able to improve the MRR and finished surface quality of the sapphire substrates greatly. The material removal and surface polishing mechanisms of sapphire in UFV-CMP are discussed too. (C) 2010 Elsevier B. V. All rights reserved.