Channel Hot Carrier Degradation Mechanism in Long/Short Channel n-FinFETs
Channel Hot Carrier Degradation Mechanism in Long/Short Channel n-FinFETs
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DOI：
10.1109/ted.2013.2285245
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发表时间：
2013-12-01
影响因子：
3.1
通讯作者：
Groeseneken, Guido
中科院分区：
文献类型：
--
作者：
Cho, Moonju;Roussel, Philippe;Groeseneken, Guido
研究了n-FinFET器件的沟道热载流子退化机理。在长沟道器件中，由热载流子引起的界面退化主要在最大碰撞电离条件下（V-G类似于V-D/2）使器件退化。在更高的V-G接近V-D，冷和热载流子注入到氧化物体缺陷增加，并在V-G = V-D应力条件下占主导地位。另一方面，在短沟道器件中，热载流子相对于V-G连续地产生，并且在V-G = V-D处高度地产生，并且这种热载流子注入到氧化物体缺陷中是主要的退化机制。
The channel hot carrier degradation mechanisms in n-FinFET devices are studied. In long channel devices, interface degradation by hot carriers mainly degrades the device at the maximum impact ionization condition (V-G similar to V-D/2). At higher V-G closer to V-D, cold and hot carrier injection to the oxide bulk defect increases and dominates at the V-G = V-D stress condition. On the other hand, in short channel devices, hot carriers are generated continuously with respect to V-G and highly at V-G = V-D, and this hot carrier injection into the oxide bulk defect is the main degradation mechanism.