High quality Ge epitaxial layers in narrow channels on Si (001) substrates
High quality Ge epitaxial layers in narrow channels on Si (001) substrates
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DOI：
10.1063/1.3360231
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发表时间：
2010-03
影响因子：
4
通讯作者：
G. Wang;E. Rosseel;R. Loo;P. Favia;H. Bender;M. Caymax;M. Heyns;W. Vandervorst
中科院分区：
文献类型：
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作者：
G. Wang;E. Rosseel;R. Loo;P. Favia;H. Bender;M. Caymax;M. Heyns;W. Vandervorst
我们展示了选择性生长的高品质的Ge外延层的通道窄至10 nm的图案化的Si（001）衬底上的组合的低温生长和选择性再结晶使用Ge熔体和再生长在毫秒激光退火。在高生长温度下填充窄沟槽，以获得高质量的层被证明是禁止的Ge外扩散，由于在这样的窄通道中的高Ge化学势。在低温下，保持了一个外延终止的表面，这抵消了锗吸附原子的向外扩散，并提供了良好的沟槽填充。由此产生的低结晶质量可以通过使用毫秒激光退火的选择性Ge熔化和外延再生长来恢复。
We demonstrate the selective growth of high quality Ge epitaxial layers in channels as narrow as 10 nm on patterned Si (001) substrates by a combination of low temperature growth and selective recrystallization using Ge melt and regrowth during a millisecond laser anneal. Filling narrow trenches at high growth temperature as required for obtaining high quality layers was shown to be prohibited by Ge outdiffusion due to the high Ge chemical potential in such narrow channels. At low temperature, a hydride-terminated surface is maintained which counteracts the outdiffusion of the Ge adatoms and provides excellent trench filling. The resulting low crystalline quality can be restored by a selective Ge melt and epitaxial regrowth using a millisecond laser anneal.