Plasmonic enhanced silicon pyramids for internal photoemission Schottky detectors in the near-infrared regime
Plasmonic enhanced silicon pyramids for internal photoemission Schottky detectors in the near-infrared regime
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DOI:
10.1364/optica.2.000335
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发表时间:
2015-04-20
期刊:
影响因子:
10.4
通讯作者:
Levy, Uriel
中科院分区:
文献类型:
--
作者:
Desiatov, Boris;Goykhman, Ilya;Levy, Uriel
We demonstrate a nanoscale broadband silicon plasmonic Schottky detector with high responsivity and improved signal to noise ratio operating in the sub-bandgap regime. Responsivity is enhanced by the use of pyramidally shaped plasmonic concentrators. Owing to the large cross-section of the pyramid, light is collected from a large area which corresponds to its base, concentrated toward the nano apex of the pyramid, absorbed in the metal, and generates hot electrons. Using the internal photoemission process, these electrons cross over the Schottky barrier and are collected as a photocurrent. The combination of using silicon technology together with the high collection efficiency and nanoscale confinement makes the silicon pyramids ideal for playing a central role in the construction of improved photodetectors. Furthermore, owing to the small active area, the dark current is significantly reduced as compared with flat detectors, and thus an improved signal to noise ratio is obtained. Our measurements show high responsivities over a broad spectral regime, with a record high of about 30 mA/W at the wavelength of 1064 nm, while keeping the dark current as low as similar to 100 nA. Finally, such detectors can also be constructed in the form of a pixel array, and thus can be used as focal plane detector arrays. (C) 2015 Optical Society of America