Surface passivation of Cu(In,Ga)Se2 using atomic layer deposited Al2O3
Surface passivation of Cu(In,Ga)Se2 using atomic layer deposited Al2O3
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DOI：
10.1063/1.3675849
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发表时间：
2012-01-09
影响因子：
4
通讯作者：
Liu, C. W.
中科院分区：
文献类型：
--
作者：
Hsu, W. -W.;Chen, J. Y.;Liu, C. W.
在Cu(In，Ga)Se-2表面进行Al_2O_3钝化处理后，由于表面复合速度的降低，积分光致发光强度可提高两个数量级。从5 nm到50 nm，光致发光强度随Al_2O_3厚度的增加而增大。电容-电压测量表明薄膜中有负的固定电荷。根据第一性原理计算，与未钝化的Cu(In，Ga)Se-2相比，沉积Al_2O_3只能降低约35%的界面缺陷密度。因此，钝化效应主要由场效应引起，库仑排斥降低了表面载流子浓度。(C)2012年美国物理研究所。[DOI：10.1063/1.3675849]
With Al2O3 passivation on the surface of Cu(In,Ga)Se-2, the integrated photoluminescence intensity can achieve two orders of magnitude enhancement due to the reduction of surface recombination velocity. The photoluminescence intensity increases with increasing Al2O3 thickness from 5 nm to 50 nm. The capacitance-voltage measurement indicates negative fixed charges in the film. Based on the first principles calculations, the deposition of Al2O3 can only reduce about 35% of interface defect density as compared to the unpassivated Cu(In,Ga)Se-2. Therefore, the passivation effect is mainly caused by field effect where the surface carrier concentration is reduced by Coulomb repulsion. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3675849]