Room-temperature nanoimprint and nanotransfer printing using hydrogen silsequioxane
Room-temperature nanoimprint and nanotransfer printing using hydrogen silsequioxane
复制标题
使用氢倍半硅氧烷的室温纳米压印和纳米转印
DOI：
10.1116/1.1545754
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发表时间：
2003
影响因子：
1.4
通讯作者：
M. Komuro
中科院分区：
文献类型：
--
作者：
S. Matsui;Y. Igaku;H. Ishigaki;J. Fujita;M. Ishida;Y. Ochiai;H. Namatsu;M. Komuro
室温纳米压印光刻（RT-NIL）技术的发展是为了克服传统纳米压印光刻（NIL）工艺中由热膨胀引起的临界尺寸和图案放置误差。我们提出了RT-NIL使用氢倍半硅氧烷（HSQ），而不是在传统的NIL中使用的聚（甲基丙烯酸甲酯）。我们展示了HSQ复制图案与90 nm直径的孔和50 nm的线宽为室温下复制。此外，我们还利用HSQ的粘附特性开发了新的纳米转移印刷技术。我们还演示了光致抗蚀剂和Au图案从模具转移到衬底。
Room-temperature nanoimprint lithography (RT-NIL) technology has been developed to overcome critical dimensions and pattern placement errors caused by thermal expansion in the conventional nanoimprint lithography (NIL) process. We propose RT-NIL using hydrogen silsequioxane (HSQ) instead of the poly(methylmethacrylate) used in conventional NIL. We demonstrate HSQ-replicated patterns with a 90 nm diameter hole and 50 nm linewidth for room-temperature replications. Furthermore, we have developed new nanotransfer printing technology utilizing the adhesion characteristics of HSQ. We also demonstrate the transfer of photoresist and Au patterns from a mold to a substrate.