Dispersion of nanoscale oxides in MnSi1.73 fabricated by solid state reaction and pulsed electric current sintering
Dispersion of nanoscale oxides in MnSi1.73 fabricated by solid state reaction and pulsed electric current sintering
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DOI：
10.1063/1.4943075
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发表时间：
2016-03
影响因子：
4
通讯作者：
T. Homma;Hirotaka Mima;M. Nanko;M. Takeda
中科院分区：
文献类型：
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作者：
T. Homma;Hirotaka Mima;M. Nanko;M. Takeda
我们已经研究了MnSi 1.73热电材料的制造工艺和所得晶体结构之间的关系，以了解微观结构对热电性能的影响。基于Ye和Amelinckx方法[J.Solid State Chem.61，8（1986）]，基质相的局部晶体结构被确定为调制的Mn 15 Si 26相。Mn15Si26相是简并半导体，表现出类似金属的行为。此外，纳米SiO2颗粒分散。SiO2的晶体结构是非晶态的，SiO2颗粒由于其固有的特性而降低了热导率。由于Mn_（15）Si_（26）和SiO_2的多重显微结构，获得了0.38的相对较高的品质因数。
We have investigated a relationship between the fabrication process and the resultant crystal structure of a MnSi1.73 thermoelectric material in order to understand the effect of microstructures on the thermoelectric properties. Local crystal structure of the matrix phase is identified as a modulated Mn15Si26 phase based on the Ye and Amelinckx method [J. Solid State Chem. 61, 8 (1986)]. The Mn15Si26 phase is a degenerate semiconductor showing metal like behavior. In addition, nanoscale SiO2 particles are dispersed. The crystal structure of SiO2 is amorphous, and the SiO2 particles reduce thermal conductivity because of its inherent characteristic. A relatively high figure of merit of 0.38 is obtained, resulting from the multiple microstructures of Mn15Si26 and SiO2.