PICOSECOND OPTOELECTRONIC DETECTION, SAMPLING, AND CORRELATION-MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS
PICOSECOND OPTOELECTRONIC DETECTION, SAMPLING, AND CORRELATION-MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS
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DOI：
10.1063/1.91947
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发表时间：
1980-01-01
影响因子：
4
通讯作者：
BEAN, JC
中科院分区：
文献类型：
--
作者：
AUSTON, DH;JOHNSON, AM;BEAN, JC
高缺陷密度非晶半导体（例如蒸发的非晶硅）的光响应的快速弛豫已被用来开发电子测量能力，可以以≤ 10 ps的速度生成和采样电子瞬态。
The rapid relaxation of the photoresponse of high-defect-density amorphous semiconductors such as evaporated a-Si has been utilized to develop an electronic measurement capability which can generate and sample electronic transients with speeds≤ 10 ps.