Enhanced direct interband transitions in silicon nanowires studied by electron energy-loss spectroscopy
Enhanced direct interband transitions in silicon nanowires studied by electron energy-loss spectroscopy
复制标题
通过电子能量损失光谱研究硅纳米线中增强的直接带间跃迁
DOI：
10.1103/physrevb.75.245317
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发表时间：
2007
影响因子：
3.7
通讯作者：
M. Terauchi
中科院分区：
文献类型：
--
作者：
J. Kikkawa;S. Takeda;Yohei K. Sato;M. Terauchi
We have experimentally observed abnormally enhanced direct interband transitions in silicon nanowires covered with $\mathrm{Si}{\mathrm{O}}_{2}$ layers by means of electron energy-loss spectroscopy (EELS). Core-diameter dependence of the EELS spectra was systematically studied. It was clarified that both ${E}_{1}$ and ${E}_{2}$ direct interband transitions of Si core are explicitly enhanced, owing to monopolar surface plasmons at a $\mathrm{Si}∕\mathrm{Si}{\mathrm{O}}_{2}$ interface whenever core diameter is small. We also discuss the effects of thickness of the oxide layers on the direct interband transitions.
We have experimentally observed abnormally enhanced direct interband transitions in silicon nanowires covered with $\mathrm{Si}{\mathrm{O}}_{2}$ layers by means of electron energy-loss spectroscopy (EELS). Core-diameter dependence of the EELS spectra was systematically studied. It was clarified that both ${E}_{1}$ and ${E}_{2}$ direct interband transitions of Si core are explicitly enhanced, owing to monopolar surface plasmons at a $\mathrm{Si}∕\mathrm{Si}{\mathrm{O}}_{2}$ interface whenever core diameter is small. We also discuss the effects of thickness of the oxide layers on the direct interband transitions.