Strain and surface orientation engineering in extremely-thin body Ge and SiGe-on-insulator MOSFETs fabricated by Ge condensation
Strain and surface orientation engineering in extremely-thin body Ge and SiGe-on-insulator MOSFETs fabricated by Ge condensation
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通过 Ge 冷凝制造的极薄体 Ge 和绝缘体上 SiGe MOSFET 的应变和表面取向工程
DOI：
10.1109/iedm19573.2019.8993595
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
Takagi S.
中科院分区：
文献类型：
--
作者：
Jo K. - W.;Lim C.- M.;Kim W. - K.;Toprasertpong K.;Takenaka M.;Takagi S.
我们提出并展示了一种新的沟道应变控制技术，能够在同一衬底上实现高性能拉伸应变绝缘体上锗（GOI）n-MOSFET和压缩应变GOI p-MOSFET。结果表明，Ge凝聚后在850 ℃的氧化使GOI的应变状态从1.8%的压应变变为0.5%的张应变，电子迁移率提高了2.1。此外，薄GOI沟道厚度引入归因于GOI带调制的显著迁移率增强，导致GOI厚度为2.5 nm的n-MOSFET中的电子迁移率为777 cm 2/Vs。为了提高p-MOSFET的性能，研究了Ge凝聚形成（110）取向SGOI的方法。结果发现，SGOI与Ge分数为54%的最大空穴迁移率从应变和Ge分数的观点。与迄今为止报道的平面GOI/SGOI p-MOSFET的迁移率相比，压缩应变（110）27 nm厚的Si 046 G 054 OI p-MOSFET的空穴迁移率达到了创纪录的837 cm 2/Vs。此外，对于5 nm厚的超薄体（110）Si 046 G 054 OI p-MOSFET，仍保持295 cm 2/Vs的高空穴迁移率。
We propose and demonstrate a new channel strain control technology enabling to realize both high performance tensile strain Ge-on-insulator (GOI) n-MOSFETs and compressive strain GOI p-MOSFETs on a same substrate. It is found that additional oxidation at 850oC after Ge condensation changes the strain condition in GOI from 1.8 % compressive strain to 0.5% tensile strain, resulting in the electron mobility enhancement of 2.1. Furthermore, thinning GOI channel thickness introduces significant mobility enhancement attributable to GOI band modulation, leading to electron mobility of 777 cm2/Vs in n-MOSFETs with GOI thickness of 2.5 nm. For performance enhancement of p-MOSFETs, (110)-oriented SGOI formation by Ge condensation is studied. It is found that SGOI with the Ge fraction of 54 % maximizes the hole mobility from the viewpoints of both strain and Ge fractions. Record high hole mobility of 837 cm2/Vs is demonstrated with compressive strain (110) 27-nm-thick Si046G054OI p-MOSFETs, compared with mobility in planar GOI/SGOI p-MOSFETs reported so far. In addition, high hole mobility of 295 cm2/Vs is still maintained for 5-nm-thick extremely-thin body (110) Si046G054OI p-MOSFETs.