Transport properties of Co-doped β-FeSi2 single crystals
Transport properties of Co-doped β-FeSi2 single crystals
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Co掺杂β-FeSi2单晶的输运特性
DOI：
10.1063/1.2396761
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发表时间：
2006
影响因子：
3.2
通讯作者：
J. Schumann
中科院分区：
文献类型：
--
作者：
E. Arushanov;K. Lisunov;H. Vinzelberg;G. Behr;J. Schumann
研究了Co掺杂n型FeSi 2单晶在4.2 K T 300 K温度范围内的电阻率ρ（T），并根据关系式ρ（T）= ApT 1 pexp[（T0 T）1 p]在不同跳跃电导率模型的框架内进行了分析。在可变范围跳跃电导率内，观察到p=4的Mott区域[金属-绝缘体转变（Taylor &弗朗西斯，伦敦，1990）]和p=2的Shklovskiii-Efros区域[掺杂半导体的电子性质（Springer，柏林，1984）]，以及它们的交叉，其中电阻率的温度依赖性遵循标度律ln（ρ scinp 0）=Af（T scinTx）。在局域态密度（DOS）谱中，确定了特征温度（T_0）、转变温度和软库仑能隙宽度（Δ T）为0.5-1.6meV。除了Δ之外，我们的结果还表明，在DOS谱中存在刚性能隙，其值高达δ≈0.35meV。刚性间隙与电荷的极化性质一致...
Resistivity ρ(T) of Co-doped n-type FeSi2 single crystals is investigated in the temperature range of 4.2K⩽T⩽300K, and analyzed within the framework of different hopping conductivity models according to the relation ρ(T)=ApT1∕pexp[(T0∕T)1∕p]. Both the Mott regime with p=4 [Metal-Insulator Transitions (Taylor & Francis, London, 1990)] and the Shklovskii-Efros regime with p=2 [Electronic Properties of Doped Semiconductors (Springer, Berlin, 1984)] within the variable-range hopping conductivity are observed, as well as a crossover of them, where the temperature dependence of the resistivity follows a scaling law ln(ρ∕ρ0)=Af(T∕Tx). The values of the characteristic (T0) and transition temperatures and the width of the soft Coulomb gap in the spectrum of the density of the localized states (DOS) Δ≈0.5–1.6meV are determined. In addition to Δ, our results suggest existence of the rigid gap in the spectrum of the DOS with the value up to δ≈0.35meV. The rigid gap is consistent with a polaronic nature of the charge ...
纳米晶FeSi_2的光学性质及氢化作用的影响
DOI：
--
发表时间：
2006
期刊：
Applied Physics Letters 88
影响因子：
--
作者：
K.Takarabe et al.
通讯作者：
K.Takarabe et al.