Ge/Si Heterojunction Tunnel Field-Effect Transistors and Their Post Metallization Annealing Effect
Ge/Si Heterojunction Tunnel Field-Effect Transistors and Their Post Metallization Annealing Effect
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DOI：
10.1109/ted.2014.2371038
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发表时间：
2015
影响因子：
3.1
通讯作者：
Minsoo Kim;Y. Wakabayashi;M. Yokoyama;R. Nakane;M. Takenaka;S. Takagi
中科院分区：
文献类型：
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作者：
Minsoo Kim;Y. Wakabayashi;M. Yokoyama;R. Nakane;M. Takenaka;S. Takagi
演示了具有 Al2O3 栅极堆叠的 Ge/Si 异质结隧道场效应晶体管 (TFET)。 58 mV/decade 的陡峭亚阈值摆幅 (SS) 和超过 107 的大 ION/IOFF 比的高性能是通过适当的金属化后退火 (PMA) 工艺实现的。通过电子回旋共振氧等离子体后氧化，我们可以获得Dit低至~1011 cm-2eV-1的高质量Al2O3/Ge界面。研究了将 PMA 温度从 200 °C 改变到 400 °C 时 Ge/SOI TFET 的电气特性。研究发现Al2O3与Si沟道区之间的Dit是显着降低Ge/Si异质结TFET的SS的关键因素。
Ge/Si heterojunction tunnel field-effect transistors (TFETs) with an Al2O3 gate-stack are demonstrated. The high performances of steep subthreshold swing (SS) of 58 mV/decade and large ION/IOFF ratio over 107 are realized by a proper postmetallization annealing (PMA) process. We can obtain the high-quality Al2O3/Ge interface with Dit of as low as ~1011 cm-2eV-1 by electron cyclotron resonance oxygen plasma post oxidation. The electrical characteristics of the Ge/SOI TFETs are studied with changing PMA temperature from 200 °C to 400 °C. It is found that Dit between Al2O3 and the Si channel region is a critical factor for significantly reducing SS of Ge/Si heterojunction TFETs.