Observation of sharp emission lines from Zn-doped GaN
Observation of sharp emission lines from Zn-doped GaN
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DOI：
10.7567/1347-4065/ab0cff
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发表时间：
2019-05
影响因子：
1.5
通讯作者：
K. Gao;Tomoyuki Aoki;M. Arita;Y. Arakawa;M. Holmes
中科院分区：
文献类型：
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作者：
K. Gao;Tomoyuki Aoki;M. Arita;Y. Arakawa;M. Holmes
我们报道了对氮化镓中与锌相关的发射中心的尖锐发射线的观测和特性描述。对这些发射线的初步研究表明，它们仅在低温（T < 50 K）下出现，能量稳定，并且线宽为几毫电子伏特。文中对其可能的起源进行了简要讨论。
We report the observation and characterization of sharp emission lines from Zn-related emission centers in GaN. Initial studies on the emission lines show that they appear only at low temperatures (T < 50 K), are energetically stable, and exhibit linewidths of a few meV. A brief discussion on their possible origins is given.