Complex three-dimensional structures in Si{100} using wet bulk micromachining

Complex three-dimensional structures in Si{100} using wet bulk micromachining
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DOI:
10.1088/0960-1317/19/10/105008
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发表时间:
2009-10-01
影响因子:
2.3
通讯作者:
Sato, Kazuo
Sato, Kazuo
中科院分区:
工程技术4区
文献类型:
--
作者:
Pal, Prem;Sato, Kazuo

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采用湿体微加工技术在硅{100}晶圆上制备了复杂的微机电系统(MEMS)三维结构。这些结构分为两类:固定式和独立式。这两种类型的制造工艺都使用单晶片,依次沉积氮化物和氧化物层,硅的局部氧化(LOCOS)和两步湿各向异性蚀刻。固定结构包含完美的锋利边缘。热沉积氧化物被用作独立式结构的材料。用Triton X-100 (C(14)H(22)O(C(2)H(4)O)(n), n = 9-10)在四甲基氢氧化铵(TMAH)中进行湿蚀刻。对于固定结构,两个蚀刻步骤都是在25 wt% TMAH + Triton或纯TMAH或两者中进行的,具体取决于结构的类型。在独立式系统中,首先使用TMAH + Triton,然后使用纯TMAH。制造方法可以实现密集排列的结构,允许制造波纹隔膜,紧凑尺寸的液体(或气体)流动输送系统,用于软MEMS结构(例如PDMS(聚二甲基硅氧烷))和其他应用的新形状模具。本研究是制造先进MEMS结构的一种方法,扩展了硅各向异性刻蚀制造三维结构的范围。
Complex three-dimensional structures for microelectromechanical systems (MEMS) are fabricated in Si{100} wafers using wet bulk micromachining. The structures are divided into two categories: fixed and freestanding. The fabrication processes for both types utilize single wafers with sequentially deposited nitride and oxide layers, local oxidation of silicon (LOCOS) and two steps of wet anisotropic etching. The fixed structures contain perfectly sharp edges. Thermally deposited oxide is used as the material for the freestanding structures. Wet etching is performed in tetramethyl ammonium hydroxide (TMAH) with and without Triton X-100 (C(14)H(22)O(C(2)H(4)O)(n), n = 9-10). For the fixed structures, both etching steps are performed either in 25 wt% TMAH + Triton or pure TMAH or both, depending upon the type of the structures. In the case of freestanding systems, TMAH + Triton is utilized first, followed by pure TMAH. The fabrication methods enable densely arrayed structures, allowing the manufacture of corrugated diaphragms, compact size liquid (or gas) flow delivery systems, newly shaped mold for soft MEMS structures (e.g. PDMS (polydimethylsiloxane)) and other applications. The present research is an approach to fabricate advanced MEMS structures, extending the range of 3D structures fabricated by silicon anisotropic etching.