Improved photoresponsivity of semiconducting BaSi2 epitaxial films grown on a tunnel junction for thin-film solar cells
Improved photoresponsivity of semiconducting BaSi2 epitaxial films grown on a tunnel junction for thin-film solar cells
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DOI：
10.1063/1.3703585
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发表时间：
2012-04-09
影响因子：
4
通讯作者：
Suemasu, Takashi
中科院分区：
文献类型：
--
作者：
Du, Weijie;Suzuno, Mitsushi;Suemasu, Takashi
在Si（111）上的n(+)-BaSi2/p(+)-Si隧道结（TJ）上形成的400 nm厚未掺杂n型BaSi2外延层获得了最高的光响应率和1.55 eV下超过70%的内量子效率。在TJ和未掺杂的BaSi2层之间，通过固相外延生长的中间多晶Si层有效地抑制了Sb原子的扩散。(C) 2012年美国物理研究所。[http://dx.doi.org/10.1063/1.3703585]
The highest photoresponsivity and an internal quantum efficiency exceeding 70% at 1.55 eV were achieved for 400 nm thick undoped n-type BaSi2 epitaxial layers formed on a n(+)-BaSi2/p(+)-Si tunnel junction (TJ) on Si(111). The diffusion of Sb atoms was effectively suppressed by an intermediate polycrystalline Si layer grown by solid phase epitaxy, located between the TJ and undoped BaSi2 layers. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3703585]