Precise Magnetization Measurements of Single-Crystalline FeSi under High Pressure
Precise Magnetization Measurements of Single-Crystalline FeSi under High Pressure
复制标题
高压下单晶硅铁磁化强度的精确测量
DOI：
10.1143/jpsj.68.1693
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发表时间：
1999
影响因子：
1.7
通讯作者：
T. Kanomata
中科院分区：
文献类型：
--
作者：
K. Koyama;T. Goto;T. Kanomata
使用带有微型高压钳位单元的 SQUID 磁力计，在 T = 5 K 至 300 K 的温度范围内对单晶硅铁进行了高达 P = 12 kbar 的高压下的磁化过程和磁化率测量。根据这些数据的分析，T = 300 K 时磁化率 χ 的体积依赖性估计为 d ln χ/ d ln V = 10.3。使用交换增强半导体模型，对于 P = 0 kbar 和 -10.8，T = 0 K、E g 0 的能隙以及 E g 0 、d ln E g 0 / d ln V 的体积依赖性分别评估为 62 meV。
Magnetization process and susceptibility measurements at high pressures up to P =12 kbar have been performed on single-crystalline FeSi in the temperature range from T =5 K to 300 K using a SQUID magnetometer with a miniature high-pressure clamp cell. From the analyses of these data, the volume dependence of the susceptibility χ for T =300 K is estimated to be d ln χ/ d ln V =10.3. Using an exchange enhanced semiconductor model, the energy gap for T =0 K, E g 0 , and the volume dependence of E g 0 , d ln E g 0 / d ln V , are evaluated to be 62 meV for P =0 kbar and -10.8, respectively.