Improved Characterization Methology for MOSFETs up to 220 GHz
Improved Characterization Methology for MOSFETs up to 220 GHz
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DOI：
10.1109/tmtt.2009.2017359
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发表时间：
2009-04
影响因子：
4.3
通讯作者：
N. Waldhoff;C. Andrei;D. Gloria;S. Lépilliet;F. Danneville;G. Dambrine
中科院分区：
文献类型：
--
作者：
N. Waldhoff;C. Andrei;D. Gloria;S. Lépilliet;F. Danneville;G. Dambrine
测量和建模程序，以准确地提取一个小信号等效电路的先进MOSFET高达220 GHz的建议。所进行的方法从矢量网络分析仪校准到使用复数去嵌入的仿真结果。使用此程序获得的测量和模拟数据之间的良好比较显示高达220 GHz。
Measurement and modeling procedures to accurately extract a small-signal equivalent circuit of advanced MOSFETs up to 220 GHz are proposed. The methodology carried out goes from the vector network analyzer calibration to the simulation results using complex deembedding. Good comparisons between the measurement and the simulation data obtained using this procedure are shown up to 220 GHz.