Growth of InN quantum dots on N-polarity GaN by molecular-beam epitaxy
Growth of InN quantum dots on N-polarity GaN by molecular-beam epitaxy
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DOI：
10.1063/1.1900948
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发表时间：
2005-04
影响因子：
4
通讯作者：
A. Yoshikawa;N. Hashimoto;N. Kikukawa;S. Che;Y. Ishitani
中科院分区：
文献类型：
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作者：
A. Yoshikawa;N. Hashimoto;N. Kikukawa;S. Che;Y. Ishitani
利用分子束外延技术研究了n极性氮化镓上InN量子点的生长行为。n极性生长被有意地用于提高温度，以促进形成高质量的点。通过反射高能电子衍射和光谱椭偏仪的同步原位观测，发现在550°C下可以以Stranski-Kastanov生长模式生长，湿层厚度约为1层。在450 ~ 550℃条件下生长的典型InN量子点的密度为1011cm−2，直径为15 ~ 20nm。
We investigated the growth behaviors of InN quantum dots (QDs) on N-polarity GaN by molecular-beam epitaxy. The N-polarity growth has been intentionally used to raise the temperature to facilitate formation of high-quality dots. It was found that the InN QDs could be grown up to 550°C the Stranski–Kastanov growth mode with the wetting layer thickness of about 1 monolayer, which was confirmed by the simultaneous in situ observations of reflection high-energy electron diffraction and spectroscopic ellipsometry. The density and the diameter of typical InN QDs grown at 450–550°C were the order of 1011cm−2 and 15–20nm, respectively.