Effective mass in remotely doped Ge quantum wells
Effective mass in remotely doped Ge quantum wells
复制标题
远程掺杂Ge量子阱中的有效质量
DOI：
10.1063/1.1541101
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发表时间：
2003
影响因子：
4
通讯作者：
H. Känel
中科院分区：
文献类型：
--
作者：
B. Rössner;G. Isella;H. Känel
我们报道了在松弛的Si0.3Ge0.7缓冲层（片密度从2.9×1011 cm−2到1.9×1012 cm−2）上远程掺杂应变Ge层的有效质量与空穴密度的依赖关系。质量是用温度相关的舒布尼科夫-德哈斯振荡确定的。没有发现质量对磁场有明显的依赖性。外推的Γ点有效质量是自由电子质量的0.080倍。根据实测数据，计算了质量随动能的变化和最上层重孔子带的形状。结果与理论预测吻合得很好。
We report on the dependence of the effective masses on hole density in remotely doped strained Ge layers on relaxed Si0.3Ge0.7 buffers with sheet densities from 2.9×1011 cm−2 to 1.9×1012 cm−2. The masses have been determined using temperature dependent Shubnikov–de Haas oscillations. No noticeable dependence of the mass on the magnetic field has been found. The extrapolated Γ point effective mass has been found to be 0.080 times the free electron mass. From the measured data the variation of the mass with kinetic energy and the shape of the topmost heavy hole subband have been calculated. The results are in good agreement with theoretical predictions.