Evaluation of emission uniformity of nanocrystalline silicon planar cathodes
Evaluation of emission uniformity of nanocrystalline silicon planar cathodes
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DOI：
10.1116/1.3271165
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发表时间：
2010-04
期刊：
影响因子：
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通讯作者：
H. Shimawaki;K. Murakami;Y. Neo;H. Mimura;F. Wakaya;M. Takai
中科院分区：
文献类型：
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作者：
H. Shimawaki;K. Murakami;Y. Neo;H. Mimura;F. Wakaya;M. Takai
具有薄膜二极管结构的平面型冷阴极，例如金属-氧化物-半导体隧穿阴极，产生高度定向发射，并且与场发射阴极相比对环境不敏感。采用脉冲激光烧蚀法在纳米晶硅上制备了一层氧化物薄膜，并在此基础上制备了平面阴极，研究了其发射均匀性。从具有薄金金属的阴极的电子发射发生在发射区域的边缘周围，在该边缘处，其被厚铝的接触金属包围，而在具有薄铂的阴极中，电子发射在该区域的中心附近。随后，随着栅电压的增加，电子发射区域扩展到整个发射区域。扫描电子显微镜图像显示，不连续的岛状结构的金膜和连续和致密的铂。结果表明，发射均匀性强烈依赖于薄金属的形貌和电阻。
A planar-type cold cathode that has a thin film diode structure, such as a metal-oxide-semiconductor tunneling cathode, produces highly directional emission and is insensitive to environment in contrast with a field emission cathode. The authors fabricated the planar cathodes based on nanocrystalline silicon covered with a thin oxide film prepared by pulsed laser ablation and examined the emission uniformity. The electron emission from the cathode with thin gold metal occurred around the edge of the emission area where it was surrounded with contact metal of thick aluminum, while electrons were emitted near the center of the area in the cathode with thin platinum. Afterward, the electron emitted area extended to the whole emission area with increasing the gate voltage. Scanning electron microscopy images showed discontinuous island structures of gold film and continuous and dense of platinum. The results demonstrated that emission uniformity was strongly dependent on morphology and resistance of thin metal.