As‐deposited Y‐Ba‐Cu‐O superconducting films on silicon at 400 °C
As‐deposited Y‐Ba‐Cu‐O superconducting films on silicon at 400 °C
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400 °C 硅基沉积 Y-Ba-Cu-O 超导薄膜
DOI：
10.1063/1.101462
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发表时间：
1989
影响因子：
4
通讯作者：
D. T. Shaw
中科院分区：
文献类型：
--
作者：
S. Witanachchi;Sushil Patel;H. Kwok;D. T. Shaw
采用等离子体辅助激光沉积技术，在衬底温度为40 0 °C的硅片上生长了Y-BaCuO薄膜。这些薄膜在沉积状态下是超导的。直接在硅上沉积的薄膜和带有氧化镁缓冲层的薄膜在超导性能上是不同的。与直接在硅上沉积的薄膜相比，具有氧化镁薄膜的薄膜具有更高的临界温度(70K)和更高的临界电流(31K时为3×103A/cm2)。用俄歇能谱和X射线光电子能谱研究了界面附近的扩散和结构变化。
Y‐Ba‐Cu‐O thin films have been grown on silicon at a substrate temperature of 400 °C by plasma‐assisted laser deposition technique. These films were superconducting in an as‐deposited state. Films deposited directly on silicon and films with a MgO buffer layer differed in their superconducting properties. Films with a MgO layer showed higher critical temperatures (70 K) and higher critical currents (3×103 A/cm2 at 31 K) than films deposited directly on Si. Depth profiling by Auger and x‐ray photoelectron spectroscopy has been employed to study the diffusion and structural variation near the interface.