Two-Dimensional InGaAs Quantum-Dot Arrays with Periods of 70–100 nm on Artificially Prepared Nanoholes
Two-Dimensional InGaAs Quantum-Dot Arrays with Periods of 70–100 nm on Artificially Prepared Nanoholes
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人工制备纳米孔上周期为 70-100 nm 的二维 InGaAs 量子点阵列
DOI：
10.1143/jjap.43.l362
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发表时间：
2004
影响因子：
1.5
通讯作者：
K. Asakawa
中科院分区：
文献类型：
--
作者：
Yusui Nakamura;N. Ikeda;S. Ohkouchi;Y. Sugimoto;H. Nakamura;K. Asakawa
我们制备了周期为70 nm和100 nm的二维InGaAs量子点(QD)阵列，其中量子点的成核几率达到∼100%。这种规则的量子点阵列是通过低温沉积In0.33Ga0.67As和随后的退火来控制人工在GaAs(001)衬底上制备的纳米孔阵列的成核位而实现的。在周期为100 nm的规则量子点阵列上，堆叠了三个InGaAs量子点层。堆积样品的横截面图像显示量子点垂直排列，在室温下显示出清晰的光致发光峰。
We have fabricated two-dimensional InGaAs quantum-dot (QD) arrays with periods of 70 nm and 100 nm, where the nucleation probability of QDs reached ∼100%. This regular QD array was realized by controlling the nucleation sites on artificially prepared nanohole arrays on GaAs (001) substrates using low-temperature deposition of In0.33Ga0.67As and subsequent annealing. On the regular QD array with the 100 nm periodicity, three InGaAs QD layers were stacked. A cross-sectional image of the stacked sample revealed vertical alignment of the QDs, which showed a clear photoluminescence peak at room temperature.