Volume-change-free GeTeN films for high-performance phase-change memory
Volume-change-free GeTeN films for high-performance phase-change memory
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DOI：
10.1088/0022-3727/46/50/505311
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发表时间：
2013-12
期刊：
影响因子：
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通讯作者：
Y. Yin;Hui Zhang;S. Hosaka;Yang Liu;Q. Yu
中科院分区：
文献类型：
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作者：
Y. Yin;Hui Zhang;S. Hosaka;Yang Liu;Q. Yu
在GETE中掺氮的目的是为了减小晶化时的体积变化，而晶化过程中的体积变化通常会在相变存储器件中引起巨大的内应力。结果表明，当N掺杂适量时，掺N GeTeN薄膜的晶化厚度变化几乎为零。在GETE中掺入N后，体积变化引起的应力引起的裂纹消失，平均晶体尺寸减小50%以上。认为这种无体积变化行为是由于低密度氮化物的形成和晶粒的细化所致。
N-doping into GeTe is investigated with the aim of reducing the volume change upon crystallization, which usually induces a huge internal stress in phase-change memory devices. It is demonstrated that the thickness change upon crystallization of a N-doped GeTe (GeTeN) film is almost zero when N is doped in an appropriate amount. Cracks resulting from the stress caused by volume change disappear and the mean crystal size decreases by more than 50% upon N-doping into GeTe. It is thought that the volume-change-free behaviour is due to the formation of low-density nitride and grain refinement.